On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals |
| Journal |
Solid State Phenomena (Volumes 82 - 84) |
| Volume |
Gettering anf Defect Engineering in Semiconductor Technology IX |
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
17-24 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.17 |
| Citation |
Wilfried von Ammon et al., 2001, Solid State Phenomena, 82-84, 17 |
| Authors |
Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf |
| Keywords |
Defect Aggregation, Nitrogen, Oxygen, Silicon, Vacancy, Void |
| Full Paper |
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