Paper Title:

On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals

Periodical Solid State Phenomena (Volumes 82 - 84)
Main Theme Gettering anf Defect Engineering in Semiconductor Technology IX
Edited by V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages 17-24
DOI 10.4028/www.scientific.net/SSP.82-84.17
Citation Wilfried von Ammon et al., 2001, Solid State Phenomena, 82-84, 17
Authors Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf
Keywords Defect Aggregation, Nitrogen, Oxygen, Silicon, Vacancy, Void
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