Paper Title:
Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
177-182
DOI
10.4028/www.scientific.net/SSP.82-84.177
Citation
S. Solmi, G. Mannino, M. Servidori, M. Bersani, L. Mancini, S. Milita, V. Privitera, M. Anderle, "Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose", Solid State Phenomena, Vols. 82-84, pp. 177-182, 2002
Online since
November 2001
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Price
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