Paper Title:
Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
243-248
DOI
10.4028/www.scientific.net/SSP.82-84.243
Citation
I.V. Antonova, E.P. Neustroev, A. Misiuk, V.A. Skuratov, "Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions", Solid State Phenomena, Vols. 82-84, pp. 243-248, 2002
Online since
November 2001
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