Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior |
| Journal |
Solid State Phenomena (Volumes 82 - 84) |
| Volume |
Gettering anf Defect Engineering in Semiconductor Technology IX |
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
25-34 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.25 |
| Citation |
Kozo Nakamura et al., 2001, Solid State Phenomena, 82-84, 25 |
| Authors |
Kozo Nakamura, Toshiaki Saishoji, Junsuke Tomioka |
| Keywords |
Diffusion, Grown-in Defects, Point Defect, Self-Interstitial, Silicon, Vacancy, Void |
| Full Paper |
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