Paper Title:
Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior
  Abstract

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Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
25-34
DOI
10.4028/www.scientific.net/SSP.82-84.25
Citation
K. Nakamura, T. Saishoji, J. Tomioka, "Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior", Solid State Phenomena, Vols. 82-84, pp. 25-34, 2002
Online since
November 2001
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