Paper Title:
Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
255-258
DOI
10.4028/www.scientific.net/SSP.82-84.255
Citation
Z. E. Horváth, M. Ádám, P. Godio, G. Borionetti, I.A. Szabó, E. Gombia, V. Van Tuyen, "Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects", Solid State Phenomena, Vols. 82-84, pp. 255-258, 2002
Online since
November 2001
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Price
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