Paper Title:
Influence of Depth in Helium Desorption from Cavities Induced by 3He Implantation in Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
303-308
DOI
10.4028/www.scientific.net/SSP.82-84.303
Citation
R. Delamare, E. Ntsoenzok, F. Labohm, A. van Veen, "Influence of Depth in Helium Desorption from Cavities Induced by 3He Implantation in Silicon", Solid State Phenomena, Vols. 82-84, pp. 303-308, 2002
Online since
November 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.