The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions |
| Journal |
Solid State Phenomena (Volumes 82 - 84) |
| Volume |
Gettering anf Defect Engineering in Semiconductor Technology IX |
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
35-40 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.35 |
| Citation |
Kazutaka Terashima et al., 2001, Solid State Phenomena, 82-84, 35 |
| Authors |
Kazutaka Terashima, Hajime Noguchi |
| Keywords |
Boron Doping, Extended Defects, Point Defect, Temperature Distribution |
| Full Paper |
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