Paper Title:
Defect Engineering and Prevention of Impurity Gettering at RP/2 in Ion-Implanted Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
399-404
DOI
10.4028/www.scientific.net/SSP.82-84.399
Citation
R. Kögler, A. Peeva, J. Kaschny, W. Skorupa, H. Hutter, "Defect Engineering and Prevention of Impurity Gettering at RP/2 in Ion-Implanted Silicon", Solid State Phenomena, Vols. 82-84, pp. 399-404, 2002
Online since
November 2001
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Price
$32.00
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