Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth |
| Journal |
Solid State Phenomena (Volumes 82 - 84) |
| Volume |
Gettering anf Defect Engineering in Semiconductor Technology IX |
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
41-48 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.41 |
| Citation |
V.V. Kalaev et al., 2001, Solid State Phenomena, 82-84, 41 |
| Authors |
V.V. Kalaev, V.A. Zabelin, Yuri N. Makarov |
| Keywords |
Czochralski Silicon Growth, Numerical Simulation, Oxygen Transport, Point Defect |
| Full Paper |
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