Paper Title:
Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
41-48
DOI
10.4028/www.scientific.net/SSP.82-84.41
Citation
V.V. Kalaev, V.A. Zabelin, Y. N. Makarov, "Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth", Solid State Phenomena, Vols. 82-84, pp. 41-48, 2002
Online since
November 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.