Paper Title:
Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
425-430
DOI
10.4028/www.scientific.net/SSP.82-84.425
Citation
E. Simoen, C. Claeys, A. Kraitchinskii, M. Kras'ko, V.B. Neimash, L.I. Shpinar, "Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon", Solid State Phenomena, Vols. 82-84, pp. 425-430, 2002
Online since
November 2001
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