Paper Title:
Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
465-470
DOI
10.4028/www.scientific.net/SSP.82-84.465
Citation
H. Ohyama, T. Hirao, E. Simoen, C. Claeys, M. Nakabayashi, S. Onoda, "Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation", Solid State Phenomena, Vols. 82-84, pp. 465-470, 2002
Online since
November 2001
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