Paper Title:

Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers

Periodical Solid State Phenomena (Volumes 82 - 84)
Main Theme Gettering anf Defect Engineering in Semiconductor Technology IX
Edited by V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages 49-56
DOI 10.4028/www.scientific.net/SSP.82-84.49
Citation Koji Sueoka et al., 2001, Solid State Phenomena, 82-84, 49
Authors Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, T. Ono, Eiichi Asayama, Y. Koike, S. Sadamitsu
Keywords Boron, Carbon, Computer Simulation of Oxygen Precipitation, Epitaxial Wafers, IG, Internal Gettering, Lattice Strains, Nitrogen, Oxygen Precipitation
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