Paper Title:
Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
49-56
DOI
10.4028/www.scientific.net/SSP.82-84.49
Citation
K. Sueoka, M. Akatsuka, M. Yonemura, T. Ono, E. Asayama, Y. Koike, S. Sadamitsu, "Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers", Solid State Phenomena, Vols. 82-84, pp. 49-56, 2002
Online since
November 2001
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