Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers |
| Journal |
Solid State Phenomena (Volumes 82 - 84) |
| Volume |
Gettering anf Defect Engineering in Semiconductor Technology IX |
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
49-56 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.49 |
| Citation |
Koji Sueoka et al., 2001, Solid State Phenomena, 82-84, 49 |
| Authors |
Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, T. Ono, Eiichi Asayama, Y. Koike, S. Sadamitsu |
| Keywords |
Boron, Carbon, Computer Simulation of Oxygen Precipitation, Epitaxial Wafers, IG, Internal Gettering, Lattice Strains, Nitrogen, Oxygen Precipitation |
| Full Paper |
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