Paper Title:
Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
515-522
DOI
10.4028/www.scientific.net/SSP.82-84.515
Citation
A.K. Fedotov, A.V. Mazanik, A. G. Ulyashin, "Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries", Solid State Phenomena, Vols. 82-84, pp. 515-522, 2002
Online since
November 2001
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Price
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