Characterization of SiC Grown on Si(111) by Supersonic C60 Beams |
| Journal |
Solid State Phenomena (Volumes 82 - 84) |
| Volume |
Gettering anf Defect Engineering in Semiconductor Technology IX |
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
523-528 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.523 |
| Citation |
L. Aversa et al., 2001, Solid State Phenomena, 82-84, 523 |
| Authors |
L. Aversa, R. Verucchi, G. Ciullo, A. Boschetti, L. Ferrari, P. Moras, M. Pedio, A. Pesci, S. Iannotta |
| Keywords |
Film Growth, Fullerene, Silicon Carbide (SiC), Supersonic Beam, Surface Spectroscopy |
| Full Paper |
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