Paper Title:
Study of Relaxed Si0.7Ge0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
539-544
DOI
10.4028/www.scientific.net/SSP.82-84.539
Citation
G. Wöhl, E. Kasper, M. Klose, T. Hackbarth, H.-J. Herzog, H. Kibbel, "Study of Relaxed Si0.7Ge0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy", Solid State Phenomena, Vols. 82-84, pp. 539-544, 2002
Online since
November 2001
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Price
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