Paper Title:
Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
735-740
DOI
10.4028/www.scientific.net/SSP.82-84.735
Citation
T. Mchedlidze, "Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures", Solid State Phenomena, Vols. 82-84, pp. 735-740, 2002
Online since
November 2001
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Price
$32.00
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