Paper Title:
1D-ACAR Studies of As-Grown Impurity Centers in Silicon
| Periodical |
Solid State Phenomena (Volumes 82 - 84)
|
| Main Theme |
Gettering anf Defect Engineering in Semiconductor Technology IX
|
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
795-800 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.795 |
| Citation |
N.Yu. Arutyunov et al., 2001, Solid State Phenomena, 82-84, 795 |
| Authors |
N.Yu. Arutyunov, V.Yu. Trashchakov |
| Keywords |
Angular Correlation Curves, Anisotropy, Annihilation Rate, As-Grown Defects, Carbon, Core Electrons, Oxygen, Positrons, Silicon |
| Price |
US$ 28,- |