Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current |
| Journal |
Solid State Phenomena (Volumes 82 - 84) |
| Volume |
Gettering anf Defect Engineering in Semiconductor Technology IX |
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
807-0 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.807 |
| Citation |
C. Grazzi et al., 2001, Solid State Phenomena, 82-84, 807 |
| Authors |
C. Grazzi, M. Albrecht, Horst P. Strunk, Z. Bougrioua, I. Moerman |
| Keywords |
EBIC, Galium Nitride (GaN), Minority Carrier Diffusion Length, Si Doping, Structural Defects, TEM |
| Full Paper |
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