Paper Title:
Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current
  Abstract

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Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
807-0
DOI
10.4028/www.scientific.net/SSP.82-84.807
Citation
C. Grazzi, M. Albrecht, H. P. Strunk, Z. Bougrioua, I. Moerman, "Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current", Solid State Phenomena, Vols. 82-84, pp. 807-0, 2002
Online since
November 2001
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