Paper Title:
Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 82-84)
Edited by
V. Raineri, F. Priolo, M. Kittler and H. Richter
Pages
81-86
DOI
10.4028/www.scientific.net/SSP.82-84.81
Citation
R. S. Brusa, W. Deng, G. P. Karwasz, A. Zecca, "Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects", Solid State Phenomena, Vols. 82-84, pp. 81-86, 2002
Online since
November 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.