Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects |
| Journal |
Solid State Phenomena (Volumes 82 - 84) |
| Volume |
Gettering anf Defect Engineering in Semiconductor Technology IX |
| Edited by |
V. Raineri, F. Priolo, M. Kittler and H. Richter |
| Pages |
81-86 |
| DOI |
10.4028/www.scientific.net/SSP.82-84.81 |
| Citation |
Roberto S. Brusa et al., 2001, Solid State Phenomena, 82-84, 81 |
| Authors |
Roberto S. Brusa, W. Deng, Grzegorz P. Karwasz, Antonio Zecca |
| Keywords |
Oxygen Precipitates, Positrons, SiOx Precipitates, Vacancy |
| Full Paper |
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