Effect of Preparation-Induced Surface Morphology on the Stability of H-Terminated Si(111) and Si(100) Surfaces |
| Journal |
Solid State Phenomena (Volume 92) |
| Volume |
Ultra Clean Processing of Silicon Surfaces VI |
| Edited by |
Marc Heyns, Paul Mertens and Marc Meuris |
| Pages |
179-182 |
| DOI |
10.4028/www.scientific.net/SSP.92.179 |
| Citation |
H. Angermann et al., 2003, Solid State Phenomena, 92, 179 |
| Authors |
H. Angermann, W. Henrion, M. Rebien, A. Röseler |
| Keywords |
Ellipsometry, H-Termination, Silicon Surface Passivation, Surface Photovoltage |
| Full Paper |
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