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Defect-Free Si Thinning by In Situ HCI Vapour Etching

Journal Solid State Phenomena (Volume 92)
Volume Ultra Clean Processing of Silicon Surfaces VI
Edited by Marc Heyns, Paul Mertens and Marc Meuris
Pages 199-202
DOI 10.4028/www.scientific.net/SSP.92.199
Citation R. Loo et al., 2003, Solid State Phenomena, 92, 199
Authors R. Loo, Matty Caymax, Olivier Richard, Peter Verheyen, Nadine Collaert
Keywords Epitaxial Growth, In Situ Vapour HCI Etch, Si Thinning
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