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Advanced Cylindrical Capacitor Formation Using Gas-Phase Selective Etching

Journal Solid State Phenomena (Volume 92)
Volume Ultra Clean Processing of Silicon Surfaces VI
Edited by Marc Heyns, Paul Mertens and Marc Meuris
Pages 203-206
DOI 10.4028/www.scientific.net/SSP.92.203
Citation Ron Hanestad et al., 2003, Solid State Phenomena, 92, 203
Authors Ron Hanestad, Brent Schwab, Jeffery W. Butterbaugh, Kun Tack Lee, Woo Gwan Shim, Sang Yong Kim, Yong Pil Han
Keywords Anhydrous HF, Capacitor, DRAM
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