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High Temperature Crystallized Poly-Si on Molybdenum Substrates for Thin-Film Transistor Application

Journal Solid State Phenomena (Volume 93)
Volume Polycrystalline Semiconductors VII
Edited by T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner
Pages 13-18
DOI 10.4028/www.scientific.net/SSP.93.13
Citation Joong Hyun Park et al., 2003, Solid State Phenomena, 93, 13
Authors Joong Hyun Park, Do Young Kim, Jae Kyung Ko, Junsin Yi
Keywords Crystallization, Flexible Substrate, Polycrystalline Silicon, Thin Film Transistor
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