Paper Title:
Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot
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Periodical
Solid State Phenomena (Volume 93)
Edited by
T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner
Pages
141-146
DOI
10.4028/www.scientific.net/SSP.93.141
Citation
H. Matsuura, T. Ishida, K. Nishikawa , N. Fukunaga, T. Kuroda, "Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot ", Solid State Phenomena, Vol. 93, pp. 141-146, 2003
Online since
June 2003
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