Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process |
| Journal |
Solid State Phenomena (Volume 93) |
| Volume |
Polycrystalline Semiconductors VII |
| Edited by |
T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner |
| Pages |
19-30 |
| DOI |
10.4028/www.scientific.net/SSP.93.19 |
| Citation |
Takeo Shiba et al., 2003, Solid State Phenomena, 93, 19 |
| Authors |
Takeo Shiba, Mutsuko Hatano, Mieko Matsumura, Yoshiaki Toyota, Yoshiharu Tai, Makoto Ohkura, Toshio Miyazawa, Toshihiko Itoga |
| Keywords |
Device Degradation, Hot Carrier Stress, Liquid Crystal Display, Polycrystalline Silicon, Thin Film Transistor |
| Full Paper |
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