Paper Title:
Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process
  Abstract

  Info
Periodical
Solid State Phenomena (Volume 93)
Edited by
T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner
Pages
19-30
DOI
10.4028/www.scientific.net/SSP.93.19
Citation
T. Shiba, M. Hatano, M. Matsumura, Y. Toyota, Y. Tai, M. Ohkura, T. Miyazawa, T. Itoga, "Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process ", Solid State Phenomena, Vol. 93, pp. 19-30, 2003
Online since
June 2003
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