Polycrystalline Silicon Thin-Film Transistors Fabricated by Defect Reduction Methods |
| Journal |
Solid State Phenomena (Volume 93) |
| Volume |
Polycrystalline Semiconductors VII |
| Edited by |
T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner |
| Pages |
37-42 |
| DOI |
10.4028/www.scientific.net/SSP.93.37 |
| Citation |
H. Watakabe et al., 2003, Solid State Phenomena, 93, 37 |
| Authors |
H. Watakabe, Mayumi Suzuki, Toshiyuki Sameshima |
| Keywords |
Carrier Mobility, Defect Passivation, Polycrystalline Silicon, Thin Film Transistor, Threshold Voltage |
| Full Paper |
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