Behavior of Polysilicon Thin-Film Transistors at Different Temperatures |
| Journal |
Solid State Phenomena (Volume 93) |
| Volume |
Polycrystalline Semiconductors VII |
| Edited by |
T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner |
| Pages |
67-72 |
| DOI |
10.4028/www.scientific.net/SSP.93.67 |
| Citation |
J.F. Llibre et al., 2003, Solid State Phenomena, 93, 67 |
| Authors |
J.F. Llibre, H. Toutah, B. Tala-Ighil, B. Boudart, T. Mohammed-Brahim, O. Bonnaud |
| Keywords |
Material Quality, Polycrystalline Silicon, Reliability, Thin Film Transistor |
| Full Paper |
Get the full paper by clicking here
|
