Gate-Insulator Film Deposition by Remote Plasma Chemical Vapour Deposition for Low-Temperature Poly-Si Thin-Film Transistors |
| Journal |
Solid State Phenomena (Volume 93) |
| Volume |
Polycrystalline Semiconductors VII |
| Edited by |
T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner |
| Pages |
73-78 |
| DOI |
10.4028/www.scientific.net/SSP.93.73 |
| Citation |
Yasuaki Murata et al., 2003, Solid State Phenomena, 93, 73 |
| Authors |
Yasuaki Murata, Masataka Itoh, Shinji Morozumi |
| Keywords |
Gate Insulator, Inductively Coupled Plasma, Polycrystalline Silicon, Remote Plasma Chemical Vapor Deposition, Thin Film Transistor |
| Full Paper |
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