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Polycrystalline Semiconductors VII

Solid State Phenomena Volume 93

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• p213 Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films   [ 602 K ]
  Authors: Mitsutoshi Miyasaka, Kenji Makihira, Tanemasa Asano, Béla Pécz, J. Stoemenos
• p219 High-Temperature Crystallization of Amorphous Silicon on a Molybdenum Substrate   [ 550 K ]
  Authors: Do Young Kim, Jae Kyung Ko, Joong Hyun Park, Utpal Gangopadhyay, Junsin Yi
• p225 Rapid Joule Heating with Metal Films Used to Crystallize Silicon Films   [ 279 K ]
  Authors: Y. Kaneko, Toshiyuki Sameshima
• p231 Low-Temperature Crystallization of Poly-SiGe Thin-Films by Solid Phase Crystallization   [ 276 K ]
  Authors: Kouichi Nakahata, M. Isomura, K. Wakisaka
• p237 Influence of Thermal Electron Irradiation on Crystallization of a Growing Si Film on a Glass Substrate   [ 63 K ]
  Authors: Susumu Horita, Seiji Miyoshi, Osamu Jaike
• p243 Solution Growth of Polycrystalline Silicon on Quartz Glass Substrates   [ 297 K ]
  Authors: Rui Kamada, Ching-ju Wen, Junichiro Otomo, Hiroshi Takahashi
• p249 Crystal Structure Analysis of Spherical Silicon Using X-Ray Pole Figures   [ 349 K ]
  Authors: S. Omae, C. Okamoto, H. Takakura, Y. Hamakawa, Mikio Murozono
• p257 Microcrystalline Silicon Thin-Films Grown by Plasma Enhanced Chemical Vapour Deposition - Growth Mechanisms and Grain Size Control   [ 3 M ]
  Authors: Pere Roca i Cabarrocas, Anna Fontcuberta i Morral, Billel Kalache, Samir Kasouit
• p269 Self-Limiting Formation and Optical Properties of Hemispherical Grains of Microcrystalline Silicon on an Amorphous Silicon Film Surface   [ 393 K ]
  Authors: Housei Akazawa
• p275 Low-Temperature Formation of Si-Nanocrystal Dots from Chlorinated Materials by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition and Optical Properties   [ 280 K ]
  Authors: Hajime Shirai, Toru Tsukamoto, Ken-ichi Kurosaki
• p281 Deposition and Characterization of Polycrystalline Silicon Thin-Films by Reactive Thermal Chemical Vapour Deposition at 450°C   [ 320 K ]
  Authors: J.W. Lee, K. Shimizu, J. Hanna
• p287 Growth of Highly <100>-Oriented Crystalline Silicon Thin Films on Molybdenum by Pulsed dc Magnetron Sputtering   [ 358 K ]
  Authors: P. Reinig, F. Fenske, A. Schöpke, B. Selle, W. Fuhs, M. Nerding, Horst P. Strunk
• p295 Characterization of Laser Ablated GaN/ZnO Bilayer on Si(111)   [ 241 K ]
  Authors: Rong Ping Wang, Hachizo Muto
• p301 Role of Potential Barriers in Epitaxial Layers of Semi-Insulating GaN Layers   [ 153 K ]
  Authors: Juozas Vidmantis Vaitkus, Eugenijus Gaubas, Shiro Sakai, Yves Lacroix, Tao Wang, Kenway M. Smith, Mahfuzur Rahman, William Cunningham
• p307 Characterization of Polycrystalline GaN Layers Grown on Alkali-Metal-Free Glass Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance Plasma   [ 352 K ]
  Authors: T. Yodo, Toshiyuki Hirano, Yasunori Harada