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Gettering and Defect Engineering in Semiconductor Technology X

Solid State Phenomena Volumes 95 - 96

• Papers
• Abstracts

• p1 Smart-Cut Process for Ultrathin SOI Wafers Manufacturing   [ 878 K ]
  Authors: Christophe Maleville
• p11 Investigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their Suppression   [ 511 K ]
  Authors: Katsuhiko Nakai, Koichi Kitahara, Yasumitsu Ohta, Atsushi Ikari, Masahiro Tanaka
• p17 Defect Formation in Heavily As-Doped Cz Si   [ 345 K ]
  Authors: S. Rouvimov, R. Kuytt, J. Kearns, V. Todt, B. Orschel, H. Siriwardane, A. Buczkowski, I. Shul'pina, George A. Rozgonyi
• p23 Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions   [ 1 M ]
  Authors: I.E. Tyschenko, A.B. Talochkin, Anton K. Gutakovskii, V.P. Popov
• p29 Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments   [ 385 K ]
  Authors: M.D. Efremov, V.A. Volodin, Liudmila I. Fedina, Anton K. Gutakovskii, D.V. Marin, S.A. Kochubei, A.A. Popov, Yu. A. Minakov, V.N. Ulasyuk
• p35 Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth   [ 358 K ]
  Authors: Michael Griebel, Lukas Jager, Axel Voigt
• p43 Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures   [ 472 K ]
  Authors: Semih Senkader, A. Giannattasio, Robert J. Falster, Peter R. Wilshaw
• p53 Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si   [ 237 K ]
  Authors: K. Takakura, H. Ohyama, T. Yoshida, Hidekazu Murakawa, J.M. Rafí, Reinhart Job, Alexander G. Ulyashin, Eddy Simoen, C. Claeys
• p59 Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon   [ 367 K ]
  Authors: Charalamos A. Londos, M.S. Potsidi, Andrzej Misiuk, Jadwiga Bak-Misiuk, Artem Shalimov, Valentin V. Emtsev
• p65 Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation   [ 336 K ]
  Authors: Alex L. Pushkarchuk, A.K. Fedotov, S.A. Kuten
• p71 Optimized Parameters for Modeling Oxygen Nucleation in Silicon   [ 280 K ]
  Authors: Markus Zschorsch, Robert Hölzl, Herbert Rüfer, Hans Joachim Möller, Wilfried von Ammon
• p77 Oxygen Ion Bombardment for Local Oxide Formation in Si   [ 1 M ]
  Authors: D. Krüger, R. Kurps, Peter Formanek, G. Weidner
• p83 Nitrogen Diffusion and Interaction with Oxygen in Si   [ 100 K ]
  Authors: Vladimir V. Voronkov, Robert J. Falster
• p93 Structure and Electronic Properties of Nitrogen Defects in Silicon   [ 323 K ]
  Authors: R. Jones, I. Hahn, Jon P. Goss, Patrick R. Briddon, Sven Öberg
• p99 Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics   [ 166 K ]
  Authors: F. Sahtout Karoui, A. Karoui, George A. Rozgonyi, M. Hourai, Koji Sueoka