Investigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their Suppression |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
11-16 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.11 |
| Citation |
Katsuhiko Nakai et al., 2003, Solid State Phenomena, 95-96, 11 |
| Authors |
Katsuhiko Nakai, Koichi Kitahara, Yasumitsu Ohta, Atsushi Ikari, Masahiro Tanaka |
| Keywords |
Carbon, Crystal Defect, Czochralski, Epitaxial Layer, Nitrogen, Silicon, TEM |
| Full Paper |
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