Paper Title:
High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon
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Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
135-140
DOI
10.4028/www.scientific.net/SSP.95-96.135
Citation
J.H. Evans-Freeman, N. Abdulgader, "High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon ", Solid State Phenomena, Vols. 95-96, pp. 135-140, 2004
Online since
September 2003
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