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Defect Formation in Heavily As-Doped Cz Si

Journal Solid State Phenomena (Volumes 95 - 96)
Volume Gettering and Defect Engineering in Semiconductor Technology X
Edited by H. Richter and M. Kittler
Pages 17-22
DOI 10.4028/www.scientific.net/SSP.95-96.17
Citation S. Rouvimov et al., 2003, Solid State Phenomena, 95-96, 17
Authors S. Rouvimov, R. Kuytt, J. Kearns, V. Todt, B. Orschel, H. Siriwardane, A. Buczkowski, I. Shul'pina, George A. Rozgonyi
Keywords Arsenic Clustering, Cz As-Doped Silicon, Defect generation, Photoluminescence (PL), X-Ray Diffraction (XRD), XRT
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