Paper Title:
Defect Formation in Heavily As-Doped Cz Si
| Periodical | Solid State Phenomena (Volumes 95 - 96) |
|---|---|
| Main Theme | Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by | H. Richter and M. Kittler |
| Pages | 17-22 |
| DOI | 10.4028/www.scientific.net/SSP.95-96.17 |
| Citation | S. Rouvimov et al., 2003, Solid State Phenomena, 95-96, 17 |
| Online since | September, 2003 |
| Authors | S. Rouvimov, R. Kuytt, J. Kearns, V. Todt, B. Orschel, H. Siriwardane, A. Buczkowski, I. Shul'pina, George A. Rozgonyi |
| Keywords | Arsenic Clustering, Cz As-Doped Silicon, Defect generation, Photoluminescence (PL), X-Ray Diffraction (XRD), XRT |
| Price | US$ 28,- |
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