Defect Formation in Heavily As-Doped Cz Si |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
17-22 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.17 |
| Citation |
S. Rouvimov et al., 2003, Solid State Phenomena, 95-96, 17 |
| Authors |
S. Rouvimov, R. Kuytt, J. Kearns, V. Todt, B. Orschel, H. Siriwardane, A. Buczkowski, I. Shul'pina, George A. Rozgonyi |
| Keywords |
Arsenic Clustering, Cz As-Doped Silicon, Defect generation, Photoluminescence (PL), X-Ray Diffraction (XRD), XRT |
| Full Paper |
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