Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
229-234 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.229 |
| Citation |
Stephan Riepe et al., 2003, Solid State Phenomena, 95-96, 229 |
| Authors |
Stephan Riepe, G. Stokkan, T. Kieliba, W. Warta |
| Keywords |
CDI, Dislocations, Grain Boundary, Minority Carrier Density, Multicrystalline Silicon |
| Full Paper |
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