Paper Title:
Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions
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Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
23-28
DOI
10.4028/www.scientific.net/SSP.95-96.23
Citation
I. E. Tyschenko, A.B. Talochkin, A. K. Gutakovskii, V.P. Popov, "Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions", Solid State Phenomena, Vols. 95-96, pp. 23-28, 2004
Online since
September 2003
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