Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
23-28 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.23 |
| Citation |
Ida E. Tyschenko et al., 2003, Solid State Phenomena, 95-96, 23 |
| Authors |
Ida E. Tyschenko, A.B. Talochkin, Anton K. Gutakovskii, V.P. Popov |
| Keywords |
Crystallization, Hydrogen, Ion-Implantation, Nanocrystal, Silicon-on-Insulator (SOI) |
| Full Paper |
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