Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
243-248 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.243 |
| Citation |
You Dou Zheng et al., 2003, Solid State Phenomena, 95-96, 243 |
| Authors |
You Dou Zheng, Ning Jiang, Ping Han, Shu Lin Gu, Shun Ming Zhu, Rou Lian Jiang, Yi Shi, Wan Fang Lu, Bo Shen, Rong Zhang |
| Keywords |
Chemical Vapour Deposition (CVD), Si1-x-yGexCy Alloy, Substitutional Incorporation |
| Full Paper |
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