Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
249-254 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.249 |
| Citation |
D. Wolansky et al., 2003, Solid State Phenomena, 95-96, 249 |
| Authors |
D. Wolansky, G.G. Fischer, D. Knoll, D. Bolze, Bernd Tillack, P. Schley, Y. Yamamoto |
| Keywords |
Crystal Defects, Herojunction Bipolar Transistor (HBT), Leakage Current |
| Full Paper |
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