Paper Title:
Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
249-254
DOI
10.4028/www.scientific.net/SSP.95-96.249
Citation
D. Wolansky, G.G. Fischer, D. Knoll, D. Bolze, B. Tillack, P. Schley, Y. Yamamoto, "Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors", Solid State Phenomena, Vols. 95-96, pp. 249-254, 2004
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Shin Harada, Yasuo Namikawa
Abstract:The area where 4H-SiC SBDs showed high reverse currents was extracted. After KOH etching, the in-grown SF on the basal plane, composed of a...
885
Authors: Shin Harada, Yasuo Namikawa, Ryuichi Sugie
Abstract:Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type...
963
Authors: Takashi Tsuji, T. Tawara, Ryohei Tanuma, Yoshiyuki Yonezawa, Noriyuki Iwamuro, K. Kosaka, H. Yurimoto, S. Kobayashi, Hirofumi Matsuhata, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose on...
913
Authors: J. Mizsei, O. Korolkov, J. Toompuu, V. Mikli, T. Rang
Chapter 7: Electrical and Structural Characterization
Abstract:Abstract. In the present paper we attempt to study and explain the increased leakage currents in Schottky diodes with an integrated...
677
Authors: Wei Yu Ho, Po Yi Tsou, Yen Shuo Chang, Cheng Liang Lin
Chapter 1: Materials and Processing Technology
Abstract:Bipolar plate with multiple functions is one of the essential components of the PEMFC (Proton Exchange Membrane Fuel Cells) stacks. Recently,...
152