Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
283-288 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.283 |
| Citation |
N.A. Sobolev et al., 2003, Solid State Phenomena, 95-96, 283 |
| Authors |
N.A. Sobolev, A.M. Emel'yanov, Elena I. Shek, V.I. Vdovin |
| Keywords |
Annealing, Electroluminescence, Extended Defects, Ion-Implantation, Light-Emitting Diode (LED), Quantum Efficiency, Single Crystal Silicon |
| Full Paper |
Get the full paper by clicking here
|
