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Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices

Journal Solid State Phenomena (Volumes 95 - 96)
Volume Gettering and Defect Engineering in Semiconductor Technology X
Edited by H. Richter and M. Kittler
Pages 297-306
DOI 10.4028/www.scientific.net/SSP.95-96.297
Citation Frédéric Cayrel et al., 2003, Solid State Phenomena, 95-96, 297
Authors Frédéric Cayrel, Daniel Alquier, Laurent Ventura, Leo Vincent, F. Roqueta, Christiane Dubois, Robert Jérisian
Keywords Device, Extended Defects, Gettering, Helium Implantation, Silicon
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