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Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium

Journal Solid State Phenomena (Volumes 95 - 96)
Volume Gettering and Defect Engineering in Semiconductor Technology X
Edited by H. Richter and M. Kittler
Pages 313-318
DOI 10.4028/www.scientific.net/SSP.95-96.313
Citation Andrzej Misiuk et al., 2003, Solid State Phenomena, 95-96, 313
Authors Andrzej Misiuk, Adam Barcz, Jacek Ratajczak, Jadwiga Bak-Misiuk
Keywords Co-Implantation, Cz-Si:H, Gettering, He, Hydrostatic Pressure, Microstructure
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