Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
35-42 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.35 |
| Citation |
Michael Griebel et al., 2003, Solid State Phenomena, 95-96, 35 |
| Authors |
Michael Griebel, Lukas Jager, Axel Voigt |
| Keywords |
Intrinsic Point Defects (IPD), Material Parameter, Molecular Dynamics (MD), Semiconducting Silicon, Stillinger-Weber Potential, Tersoff Potential |
| Full Paper |
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