Paper Title:
Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium
  Abstract

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Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
393-398
DOI
10.4028/www.scientific.net/SSP.95-96.393
Citation
L. I. Khirunenko, O.A. Kobzar, Y.V. Pomozov, M. G. Sosnin, N.A. Tripachko, N. V. Abrosimov, H. Riemann, "Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium", Solid State Phenomena, Vols. 95-96, pp. 393-398, 2004
Online since
September 2003
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