Paper Title:

Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon

Periodical Solid State Phenomena (Volumes 95 - 96)
Main Theme Gettering and Defect Engineering in Semiconductor Technology X
Edited by H. Richter and M. Kittler
Pages 447-452
DOI 10.4028/www.scientific.net/SSP.95-96.447
Citation Michael Seibt et al., 2003, Solid State Phenomena, 95-96, 447
Online since September, 2003
Authors Michael Seibt, Vitaly V. Kveder
Keywords Deep Level Transient Spectroscopy, Dislocation, Metallic Impurities, Silicide Precipitates, Silicon, TEM
Price US$ 28,-
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