Paper Title:
Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon
| Periodical |
Solid State Phenomena (Volumes 95 - 96)
|
| Main Theme |
Gettering and Defect Engineering in Semiconductor Technology X
|
| Edited by |
H. Richter and M. Kittler |
| Pages |
447-452 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.447 |
| Citation |
Michael Seibt et al., 2003, Solid State Phenomena, 95-96, 447 |
| Online since |
September, 2003 |
| Authors |
Michael Seibt, Vitaly V. Kveder |
| Keywords |
Deep Level Transient Spectroscopy, Dislocation, Metallic Impurities, Silicide Precipitates, Silicon, TEM |
| Price |
US$ 28,- |