Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods
|Periodical||Solid State Phenomena (Volumes 95 - 96)|
|Main Theme||Gettering and Defect Engineering in Semiconductor Technology X|
|Edited by||H. Richter and M. Kittler|
|Citation||P. Zaumseil et al., 2003, Solid State Phenomena, 95-96, 473|
|Online since||September 2003|
|Authors||P. Zaumseil, D. Krüger, R. Kurps, O.V. Fursenko, Peter Formanek|
|Keywords||AES, Epitaxial Layer, SiGe HBT, SIMS, Spectroscopic Ellipsometry (SE), TEM, X-Ray Diffraction (XRD), XRR|
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