Paper Title:

Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods

Periodical Solid State Phenomena (Volumes 95 - 96)
Main Theme Gettering and Defect Engineering in Semiconductor Technology X
Edited by H. Richter and M. Kittler
Pages 473-482
DOI 10.4028/www.scientific.net/SSP.95-96.473
Citation P. Zaumseil et al., 2003, Solid State Phenomena, 95-96, 473
Online since September 2003
Authors P. Zaumseil, D. Krüger, R. Kurps, O.V. Fursenko, Peter Formanek
Keywords AES, Epitaxial Layer, SiGe HBT, SIMS, Spectroscopic Ellipsometry (SE), TEM, X-Ray Diffraction (XRD), XRR
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