Paper Title:
Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
507-512
DOI
10.4028/www.scientific.net/SSP.95-96.507
Citation
N.Y. Arutyunov, R. Krause-Rehberg, "Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal", Solid State Phenomena, Vols. 95-96, pp. 507-512, 2004
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Badylevich, Yu.L. Iunin, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan
433
Authors: Daniel Macdonald, Prakash N.K. Deenapanray, Andres Cuevas, S. Diez, Stephan W. Glunz
Abstract:Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually...
497
Authors: Qiu Yan Hao, Xin Jian Xie, Bing Zhang Wang, Cai Chi Liu
Chapter 7: Optical/Electronic/Magnetic Materials
Abstract:In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the...
1323
Authors: Qiao Yun Ma, Gui Feng Chen, Hui Zhang, Jing Jing Xue, Peng Su, Qiu Yan Hao, Cai Chi Liu
Chapter 1: Academic Frontiers
Abstract:Electron irradiation on silicon results in the creation of vacancy (V) and silicon self-interstitial (I).Vacancy tends to integrate with...
115
Authors: Hui Li, Hai Tao Feng, Fang Hui Zhang, Yun Liu, Er Qing Xie
Chapter 13: Optical/Electronic/Magnetic, New Functional and Energy Materials
Abstract:Indium doped zinc oxide (ZnO:In) films were prepared in oxygen-rich condition by direct current(DC) reactive magnetron sputtering. The X-ray...
2512