Paper Title:
Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities
  Abstract

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Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
539-546
DOI
10.4028/www.scientific.net/SSP.95-96.539
Citation
M. B. Shabani, Y. Shiina, Y. Shimanuki, "Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities", Solid State Phenomena, Vols. 95-96, pp. 539-546, 2004
Online since
September 2003
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