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Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon

Journal Solid State Phenomena (Volumes 95 - 96)
Volume Gettering and Defect Engineering in Semiconductor Technology X
Edited by H. Richter and M. Kittler
Pages 59-64
DOI 10.4028/www.scientific.net/SSP.95-96.59
Citation Charalamos A. Londos et al., 2003, Solid State Phenomena, 95-96, 59
Authors Charalamos A. Londos, M.S. Potsidi, Andrzej Misiuk, Jadwiga Bak-Misiuk, Artem Shalimov, Valentin V. Emtsev
Keywords Hydrostatic Pressure, Neutron Irradiation Defects, Silicon
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