Paper Title:
Local Dielectric Degradation of Cu-Contaminated SiO2 Thin Films
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
641-646
DOI
10.4028/www.scientific.net/SSP.95-96.641
Citation
N. Tokuda, S. Nishiguchi, S. Yamasaki, K. Miki, K. Yamabe, "Local Dielectric Degradation of Cu-Contaminated SiO2 Thin Films", Solid State Phenomena, Vols. 95-96, pp. 641-646, 2004
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xiao Ping Zou, H. Abe, Toru Shimizu, A. Ando, H. Tokumoto, S.M. Zhu, Hao Shen Zhou
Abstract:In order to meet the requirements of various applications, considerable efforts have been focused on the new approaches for synthesizing...
93
Authors: Takashi Sekiguchi, J. Chen, Masami Takase, Naoki Fukata, Naoto Umezawa, Kenji Ohmori, Toyohiro Chikyo, Ryu Hasunuma, Kikuo Yamabe, Seiji Inumiya, Yasuo Nara
Abstract:We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics of metal-oxide-semiconductor field-effect transistors...
449
Authors: Taro Shimonosono, Go Hiramatsu, Yoshihiro Hirata, Soichiro Sameshima, Naoki Matsunaga, Toshiya Doi, Teruhisa Horita
Abstract:Electrochemical properties (terminal voltage, ohmic resistance and overpotential) were measured for the cells of indium tin oxide (ITO, 90...
275
Authors: Jun Chen, Takashi Sekiguchi, Masami Takase, Naoki Fukata, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, Toyohiro Chikyo
Abstract:We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k...
461
Authors: Ryu Hasunuma, Masahito Nagoshi, Kikuo Yamabe
Chapter 4: Processing of SiC
Abstract:The electrical properties of SiO2/4H-SiC(0001) was characterized, and it was confirmed that the NF3 added oxidation in...
619