Paper Title:
Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System
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Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
647-652
DOI
10.4028/www.scientific.net/SSP.95-96.647
Citation
V.D. Akhmetov, M. Kittler, W. Seifert, S. Marschmeyer, H. Richter, P. Formanek, J. Doerschel , "Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System", Solid State Phenomena, Vols. 95-96, pp. 647-652, 2004
Online since
September 2003
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