Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
647-652 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.647 |
| Citation |
V.D. Akhmetov et al., 2003, Solid State Phenomena, 95-96, 647 |
| Authors |
V.D. Akhmetov, Martin Kittler, Winfried Seifert, S. Marschmeyer, Hans Richter, Peter Formanek, J. Doerschel |
| Keywords |
C-V, Energy Dispersive X-Ray (EDX), FTIR, Low-k Dielectrics, Reactive Ion Etching |
| Full Paper |
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