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Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation

Journal Solid State Phenomena (Volumes 95 - 96)
Volume Gettering and Defect Engineering in Semiconductor Technology X
Edited by H. Richter and M. Kittler
Pages 65-70
DOI 10.4028/www.scientific.net/SSP.95-96.65
Citation Alex L. Pushkarchuk et al., 2003, Solid State Phenomena, 95-96, 65
Authors Alex L. Pushkarchuk, A.K. Fedotov, S.A. Kuten
Keywords Gettering, Grain Boundary, Oxygen, Silicon
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